complementary silicon plastic power darlingtons . . . for use as output devices in complementary general purpose amplifier applications. ? high dc current gain hfe = 1000 (min.) @ 5 adc ? monolithic construction with builtin base emitter shunt resistors ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 100 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cb ?????? ?????? 100 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v eb ?????? ?????? 5.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous e peak ????? ? ??? ? ????? i c ?????? ? ???? ? ?????? 10 20 ??? ? ? ? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 0.5 ??? ??? adc ???????????? ? ?????????? ? ???????????? total device dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 125 1.0 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 1.0 ??? ??? c/w 1.0 0.8 0 0 25 50 100 125 150 figure 1. power derating t c , case temperature ( c) derating factor 75 0.4 0.6 0.2 on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 11 1 publication order number: bdv65b/d bdv65b bdv64b darlingtons 10 amperes complementary silicon power transistors 6080100120 volts 125 watts case 340d02 sot 93, to218 type npn pnp
bdv65b bdv64b http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 100 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 50 vdc, i b = 0) ????? ????? i ceo ??? ??? e ???? ???? 1.0 ??? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 100 vdc, i e = 0) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e ???? ? ?? ? ???? 0.4 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 50 vdc, i e = 0, t c = 150 c) ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 5.0 ??? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 5.0 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 1000 ???? ? ?? ? ???? e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 5.0 adc, i b = 0.02 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 2.0 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter saturation voltage (i c = 5.0 adc, v ce = 4.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2.5 ??? ??? vdc 10k figure 2. dc current gain i c , collector current (a) 0.1 1 1k h fe , dc current gain 4 10 npn pnp v ce = 4 v i c , collector current (a) 0.1 1 h fe , dc current gain 10 figure 3. dc current gain 10k 1k 1
bdv65b bdv64b http://onsemi.com 3 10 0.1 i c , collector current (a) 10 0.1 v be(sat) @ i c /i b = 250 v, voltage (v) figure 4. aono voltages 1 1 10 i c , collector current (a) 0.1 v, voltage (v) 1 figure 5. aono voltages 0.1 10 1 v be(sat) @ i c /i b = 250 figure 6. active region safe operating area 100 1 v ce , collector-emitter voltage (v) 50 20 5 10 50 100 secondary breakdown limited @ t j 150 c thermal limit @ t c = 25 c bonding wire limit i c , collector current (a) bdv65b, bdv64b dc 5.0 ms 1.0 ms 100 m s 10 1 30 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c, t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 7. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. figure 7. thermal response t, time (ms) 1.0 0.01 0.5 0.2 0.1 0.05 0.03 0.01 0.05 0.1 0.5 1.0 5 10 50 100 100 0 z q jc(t) = r(t) r q jc r q jc = 1.0 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 (single pulse) 0.2 0.05 0.1 0.02 0.01 r(t), transient thermal resistance (normalized) 500
bdv65b bdv64b http://onsemi.com 4 package dimensions case 340d02 issue e a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bdv65b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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